Effects of p-Electrode Reflectivity on Extraction Efficiency of Nitride-Based Light-Emitting Diodes
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2008-05-25
著者
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Yoon Euijoon
Department Of Materials Science And Engineering And Inter-university Semiconductor Research Center S
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CHO Jaehee
Department of Materials Science and Engineering and Inter-university Semiconductor Research Center,
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KIM Hyunsoo
Opto System Laboratory, Corporate R&D Institute, Samsung Electro-Mechanics
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PARK Yongjo
Opto System Laboratory, Corporate R&D Institute, Samsung Electro-Mechanics
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Cho Jaehee
Department Of Materials Science And Engineering And Inter-university Semiconductor Research Center S
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Park Yongjo
Opto System Laboratory Corporate R&d Institute Samsung Electro-mechanics
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Kim Hyunsoo
Opto System Laboratory Corporate R&d Institute Samsung Electro-mechanics
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Cho Jaehee
Department Of Electrical Computer And Systems Engineering Rensselaer Polytechnic Institute
関連論文
- Effects of p-Electrode Reflectivity on Extraction Efficiency of Nitride-Based Light-Emitting Diodes
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- Growth of Less Bowed GaN Epitaxial Layers on Sapphire Substrates by Formation of Low-Temperature GaN Buffer Layer with Columnar Microstructure
- Alternating-current Light Emitting Diodes with a Diode Bridge Circuitry
- Growth of GaN Columns and Microstructures on (111) Si by Using Ge Layer via Metal Organic Chemical Vapor Deposition
- A Novel Growth Method of Freestanding GaN Using In situ Removal of Si Substrate in Hydride Vapor Phase Epitaxy