Cho Jaehee | Department Of Materials Science And Engineering And Inter-university Semiconductor Research Center S
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概要
- 同名の論文著者
- Department Of Materials Science And Engineering And Inter-university Semiconductor Research Center Sの論文著者
関連著者
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Cho Jaehee
Department Of Materials Science And Engineering And Inter-university Semiconductor Research Center S
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Cho Jaehee
Department Of Electrical Computer And Systems Engineering Rensselaer Polytechnic Institute
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Yoon Euijoon
Department Of Materials Science And Engineering And Inter-university Semiconductor Research Center S
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Schubert E.
Department Of Physics Applied Physics And Astronomy Department Of Electrical Computer And Systems En
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Schubert Martin
Department Of Physics Applied Physics And Astronomy Department Of Electrical Computer And Systems En
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CHO Jaehee
Department of Materials Science and Engineering and Inter-university Semiconductor Research Center,
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KIM Hyunsoo
Opto System Laboratory, Corporate R&D Institute, Samsung Electro-Mechanics
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PARK Yongjo
Opto System Laboratory, Corporate R&D Institute, Samsung Electro-Mechanics
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Park Yongjo
Opto System Laboratory Corporate R&d Institute Samsung Electro-mechanics
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Kim Hyunsoo
Opto System Laboratory Corporate R&d Institute Samsung Electro-mechanics
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CRAWFORD Mary
Sandia National Laboratories
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ZHU Di
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute
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KOLESKE Daniel
Sandia National Laboratories
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SHIM Hyunwook
R&D Institute, Samsung LED
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SONE Cheolsoo
R&D Institute, Samsung LED
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Zhu Di
Department Of Electrical Computer And Systems Engineering Rensselaer Polytechnic Institute
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Shim Hyunwook
R&d Institute Samsung Led
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Schubert Martin
Department Of Electrical Computer And Systems Engineering Rensselaer Polytechnic Institute
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Schubert E.
Department Of Electrical Computer And Systems Engineering Rensselaer Polytechnic Institute
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Sone Cheolsoo
R&d Institute Samsung Led
著作論文
- Effects of p-Electrode Reflectivity on Extraction Efficiency of Nitride-Based Light-Emitting Diodes
- Genetic Algorithm for Innovative Device Designs in High-Efficiency III-V Nitride Light-Emitting Diodes