Genetic Algorithm for Innovative Device Designs in High-Efficiency III-V Nitride Light-Emitting Diodes
スポンサーリンク
概要
- 論文の詳細を見る
- 2012-01-25
著者
-
Schubert E.
Department Of Physics Applied Physics And Astronomy Department Of Electrical Computer And Systems En
-
Schubert Martin
Department Of Physics Applied Physics And Astronomy Department Of Electrical Computer And Systems En
-
Cho Jaehee
Department Of Materials Science And Engineering And Inter-university Semiconductor Research Center S
-
CRAWFORD Mary
Sandia National Laboratories
-
ZHU Di
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute
-
KOLESKE Daniel
Sandia National Laboratories
-
SHIM Hyunwook
R&D Institute, Samsung LED
-
SONE Cheolsoo
R&D Institute, Samsung LED
-
Zhu Di
Department Of Electrical Computer And Systems Engineering Rensselaer Polytechnic Institute
-
Shim Hyunwook
R&d Institute Samsung Led
-
Schubert Martin
Department Of Electrical Computer And Systems Engineering Rensselaer Polytechnic Institute
-
Schubert E.
Department Of Electrical Computer And Systems Engineering Rensselaer Polytechnic Institute
-
Sone Cheolsoo
R&d Institute Samsung Led
-
Cho Jaehee
Department Of Electrical Computer And Systems Engineering Rensselaer Polytechnic Institute
関連論文
- Effects of p-Electrode Reflectivity on Extraction Efficiency of Nitride-Based Light-Emitting Diodes
- Performance of Antireflection Coatings Consisting of Multiple Discrete Layers and Comparison with Continuously Graded Antireflection Coatings
- Metal-Organic Vapor-Phase Epitaxial Growth and Characterization of Quaternary AlGaInN
- Nanostructured Multilayer Tailored-Refractive-Index Antireflection Coating for Glass with Broadband and Omnidirectional Characteristics
- OMVPE Growth of AlGaInN for UV Light Emitters
- Refractive-Index-Matched Indium–Tin-Oxide Electrodes for Liquid Crystal Displays
- Genetic Algorithm for Innovative Device Designs in High-Efficiency III-V Nitride Light-Emitting Diodes