Metal-Organic Vapor-Phase Epitaxial Growth and Characterization of Quaternary AlGaInN

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概要

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• We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence(PL), high-resolution X-ray diffraction(XRD), and Rutherford backscattering spectrometry(RBS)characterizations enables us to explore the contours of constant-PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351 nm(with 20%Al and 5%In)renders initial evidence that the quaternary could be used to provide confinement for GaInN(and possibly GaN). AlGaInN/GaInN multiple quantum wells(MQWs)heterostructures have been grown ; both XRD and PL measurement suggest the possibility of incorporating this quaternary into optoelectronic devices.

• 社団法人応用物理学会の論文
• 2000-04-30

著者

• HAN Jung

  Sandia National Laboratories

• FIGIEL Jeffrey

  Sandia National Laboratories

• PETERSEN Gary

  Sandia National Laboratories

• MYERS Samuel

  Sandia National Laboratories

• CRAWFORD Mary

  Sandia National Laboratories

• BANAS Michael

  Sandia National Laboratories

関連論文

• Stress and Defect Control in GaN Using Low Temperature Interlayers
• Metal-Organic Vapor-Phase Epitaxial Growth and Characterization of Quaternary AlGaInN
• OMVPE Growth of AlGaInN for UV Light Emitters
• Genetic Algorithm for Innovative Device Designs in High-Efficiency III-V Nitride Light-Emitting Diodes

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