130 kV High-Resolution Electron Beam Lithography System for Sub-10-nm Nanofabrication

スポンサーリンク

概要

• 論文の詳細を見る

• An electron beam lithography (EBL) system, CABL-UH, with a 130 kV high acceleration voltage has been developed that succeeded in minimizing beam size by minimizing Coulomb blur. This system has a short single-stage electron beam (EB) gun with an alignment function of two extractor centers to minimize Coulomb blur. This gun has also succeeded in thoroughly avoiding microdischarges. By adopting this EB gun and many other techniques, high resolution and long-term high stability have been achieved and an extremely fine pattern (4 nm line) has been delineated.

• 2013-06-25

著者

• OHYI Hideyuki

  CRESTEC

• Kuba Yukio

  Crestec Corporation, Hachioji, Tokyo 192-0045, Japan

• Okino Teruaki

  Crestec Corporation, Hachioji, Tokyo 192-0045, Japan

• Shibata Masahiro

  Crestec Corporation, Hachioji, Tokyo 192-0045, Japan

関連論文

• Preparation of Diamond Mold Using Electron Beam Lithography for Application to Nanoimprint Lithography
• Continuous-Stage-Movement Blankingless Electron-Beam Lithography for Patterned Media Template Fabrication
• 130 kV High-Resolution Electron Beam Lithography System for Sub-10-nm Nanofabrication

スポンサーリンク