Continuous-Stage-Movement Blankingless Electron-Beam Lithography for Patterned Media Template Fabrication
スポンサーリンク
概要
- 論文の詳細を見る
A slider and spindle ($r$–$\theta$) stage electron beam (e-beam) mastering system with continuous-stage-movement blankingless beam shift lithography (BLSL) and flyback e-beam lithography (CSFL) brings together the features of high resolution, high accuracy, and high throughput to meet the various requirements for fabricating master templates for discrete track media and bit patterned media (BPM) for the next generation of hard disk drives. With the CSFL capability, we achieve multiple-overlay bit writing with one, two, four, and eight overlays for a BPM bit array to markedly improve track-to-track phase alignment accuracy from 5.6 nm sigma in a single write to 1.04 nm sigma in an eight overlay write. CSFL, in conjunction with the high-frequency response of the e-beam deflector, achieves 25 MHz high-throughput BPM bit array write with track pitches and bit pitches of 120 nm in the entire write range from 20 to 140 mm in diameter. This write takes only 11.6 h under the conditions of a line velocity of 3,000 mm/s, a beam current of 150 nA, a maximum rotation speed of 2,865 rpm, and a constant line velocity (CLV) write mode.
- 2009-06-25
著者
-
KOBAYASHI Kazuhiko
CRESTEC
-
MIYAZAKI Takeshi
CRESTEC
-
OHYI Hideyuki
CRESTEC
-
Kobayashi Kazuhiko
Crestec Corporation, Hachioji, Tokyo 192-0045, Japan
-
Hayashi Kunito
Crestec Corporation, Hachioji, Tokyo 192-0045, Japan
-
Kuba Yukio
Crestec Corporation, Hachioji, Tokyo 192-0045, Japan
-
Morita Hisayuki
Crestec Corporation, Hachioji, Tokyo 192-0045, Japan
-
Nita Hideyuki
Crestec Corporation, Hachioji, Tokyo 192-0045, Japan
関連論文
- Preparation of Diamond Mold Using Electron Beam Lithography for Application to Nanoimprint Lithography
- Continuous-Stage-Movement Blankingless Electron-Beam Lithography for Patterned Media Template Fabrication
- 130 kV High-Resolution Electron Beam Lithography System for Sub-10-nm Nanofabrication