Resistive Switching Effects in Metallic Nanogap Electrode Fabricated by Electroless Gold Plating

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概要

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• In this letter, we describe resistive switching and gap narrowing using nanogap electrodes fabricated by electroless gold plating. Resistive switching was observed using these nanogap electrodes, and gap narrowing was caused by applying low bias voltages that were below the operation voltages for resistance switching. The results indicate that nanogap electrodes with small gap widths could lower the voltage of the narrowing operation. Moreover, because the electroless gold plating method is a very promising technique for the mass production of nanogaps, this method is useful for application to nanogap devices.

• 2012-08-25

著者

• Majima Yutaka

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Kobayashi Kei

  Department Of Applied Chemistry Faculty Of Engineering Chiba University

• NAITOH Yasuhisa

  Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)

• YAMADA Hirofumi

  Office of Society-Academia Collaboration for Innovation, Kyoto University

• OHMURA Eiji

  Department of Electronic Science and Engineering, Kyoto University

• Ohmura Eiji

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

• TAKESHITA Shuhei

  Materials and Structures Laboratory, Tokyo Institute of Technology

• ISHIDA Daiki

  Department of Electronic Science and Engineering, Kyoto University

• Ishida Daiki

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

• Kobayashi Kei

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

• Takeshita Shuhei

  Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

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