Single-Electron Transistor Fabricated by Two Bottom-Up Processes of Electroless Au Plating and Chemisorption of Au Nanoparticle
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概要
- 論文の詳細を見る
Coulomb diamonds were clearly observed on single-electron transistors (SETs) fabricated by bottom-up processes of electroless plating of Au nanogap electrodes and chemisorption of a Au nanoparticle at 80 K. In the drain current–drain voltage characteristics, Coulomb staircases were modulated by the side gate voltage. Tunneling resistances and source/drain/gate capacitances of the SET were evaluated by fitting the theoretical Coulomb staircase determined on the basis of the full orthodox theory in a double-barrier tunneling junction to the experimental results of Coulomb blockade under the application of side gate voltages. The theoretical results for the Coulomb diamond are in good agreement with the experimental results.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-09-25
著者
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Azuma Yasuo
Materials And Structures Laboratory Tokyo Institute Of Technology
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Majima Yutaka
Materials And Structures Laboratory Tokyo Institute Of Technology
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Kono Keijiro
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Azuma Yasuo
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Yasutake Yuhsuke
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Kanehara Masayuki
CREST, Japan Science and Technology Agency (JST), Yokohama 226-8503, Japan
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Teranishi Toshiharu
CREST, Japan Science and Technology Agency (JST), Yokohama 226-8503, Japan
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