Threshold Current Density of the Resistance Switching in Pt Nanogap Electrode
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概要
- 論文の詳細を見る
The current density of the resistance switching of the Pt nanogap electrode was investigated to determine the nature of the electromigration responsible for the switching. The current density that is estimated from the measured current and emission area calculated using the tunneling equation is 12.1\times 10^{11} A/m2, and is nearly twice that of the Au nanogap electrode. This material dependence of the current density is related to the activation energy for electromigration, which implies that the resistance switching of nanogap electrodes is caused by electromigration.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-06-25
著者
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Suga Hiroshi
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Kumaragurubaran Somu
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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NAITOH Yasuhisa
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
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Sumiya Touru
Funai Electric Advanced Applied Technology Research Institute Inc., TCI A37, 2-1-6 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Horikawa Masayo
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Shimizu Tetsuo
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Naitoh Yasuhisa
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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