Horikawa Masayo | Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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概要
- Horikawa Masayoの詳細を見る
- 同名の論文著者
- Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japanの論文著者
関連著者
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Horikawa Masayo
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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NAITOH Yasuhisa
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
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Kiguchi Manabu
Department Of Chemistry Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Suga Hiroshi
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Suga Hiroshi
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology
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Fujihara Tetsuaki
Department Of Energy And Hydrocarbon Chemistry Graduate School Of Engineering Kyoto University
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Terao Jun
Department Of Applied Chemistry And Center For Atomic And Molecular Technologies Graduate School Of
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Tsuji Yasushi
Department Of Energy And Hydrocarbon Chemistry Graduate School Of Engineering Kyoto University
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Kumaragurubaran Somu
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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WADA Yasuo
Bio-Nano Electronics Research Center, Toyo University
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Takagi Hitoshi
Bio-Nano Electronics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan
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Sumiya Touru
Funai Electric Advanced Applied Technology Research Institute Inc., TCI A37, 2-1-6 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Morita Masayuki
Bio-Nano Electronics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan
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Takahashi Yuuta
Department of Chemistry, Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8551, Japan
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Horikawa Masayo
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8564, Japan
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Tsutsui Ken
Bio-Nano Electronics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan
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Tokuda Masahide
Bio-Nano Electronics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan
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Ito Yoshitoshi
Bio-Nano Electronics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan
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Wada Yasuo
Bio-Nano Electronics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan
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Shimizu Tetsuo
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Kiguchi Manabu
Department of Chemistry, Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8551, Japan
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Naitoh Yasuhisa
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Naitoh Yasuhisa
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8564, Japan
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TANIGUCHI Masateru
The Institute of Scientific and Industrial Research (ISIR), Osaka University
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Konoshima Yohei
Department of Energy and Hydrocarbon Chemistry, Graduate School of Engineering, Kyoto University
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Homma Kyohei
Department of Energy and Hydrocarbon Chemistry, Graduate School of Engineering, Kyoto University
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Komoto Yuuki
Department of Chemistry, Graduate School of Science and Engineering, Tokyo Institute of Technology
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Naito Yasuhisa
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology
著作論文
- Physical model for high-to-low resistive switching of gold nanogap junction (Special issue: Microprocesses and nanotechnology)
- Fabrication and Characterization of Decanedithiol Molecular Junction Using Nanogap Electrodes
- Threshold Current Density of the Resistance Switching in Pt Nanogap Electrode
- Molecular Wiring Method Based on Polymerization or Copolymerization of an Insulated π-Conjugated Monomer