Mg Doping Effect in Nonpolar a-Plane GaN

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概要

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• The properties of nonpolar a-plane GaN layers grown with different Mg doping levels were investigated. With increasing the Mg flow rate, the hole concentration initially increased and then decreased, indicating the formation of compensation centers. The dominant photoluminescence (PL) emission at relatively low Mg doping levels is the blue luminescence (BL) band due to the donor-acceptor pair (DAP) transition with Mg\text{GaV\text{N (deep donor) and Mg\text{Ga (acceptor). In addition to the weak BL band, both the ultraviolet luminescence (UVL) and yellow luminescence (YL) bands are observed at higher Mg doping level. The UVL band, especially dominant at 10 K, can be related to bound excitonic emissions involving Mg-induced extended defects, whereas one or more mechanisms may contribute to the YL band.

• 2011-12-25

著者

• Kim Jong

  Korea Advanced Institute Of Science And Technology (kaist)

• Kim Chang

  Korea Advanced Institute Of Scierice And Technology

• Song Keun

  Korea Advanced Nano Fab Center, Suwon 443-770, Korea

• Kim Hogyoung

  College of Humanities and Sciences, Hanbat National University, Daejeon 305-719, Korea

• Kim Chang

  Korea Advanced Nano Fab Center, Suwon, Gyeonggi 443-770, Korea

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