Optical Properties of Undoped a-Plane GaN Grown with Different Initial Growth Pressures

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概要

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• The optical properties of undoped a-plane GaN films grown by metal organic vapor phase epitaxy (MOVPE) with different initial growth pressures were investigated using photoluminescence (PL) measurements. Compared to GaN sample grown with higher initial grown pressure, which exhibited the dominant emission band at 3.423 eV, the dominant PL spectra for GaN sample grown with lower initial growth pressure was the donor-acceptor pair (DAP) band at 3.268 eV. Interestingly, the PL intensity of DAP longitudinal optical (LO) phonon replica was stronger than DAP emission above 50 K, indicating strong phonon coupling. The emission band at 3.359 eV observed for the sample grown with higher initial growth pressure was not observed for the sample grown with lower initial growth pressure. Based on the results obtained from Si doping, it was suggested that this band might be related with the improved crystalline quality through Si doping.

• 2012-09-25

著者

• Song Keun

  Korea Advanced Nano Fab Center, Suwon 443-770, Korea

• Kim Hogyoung

  College of Humanities and Sciences, Hanbat National University, Daejeon 305-719, Korea

• Song Keun

  Korea Advanced Nano Fab Center, Suwon, Gyeonggi 443-770, Korea

関連論文

• Carrier Dynamics of Deep-Level States in InGaN/GaN Multiquantum Wells
• Properties of Si-Doped $a$-Plane GaN Grown with Different SiH4 Flow Rates
• Mg Doping Effect in Nonpolar a-Plane GaN
• Optical Properties of Undoped a-Plane GaN Grown with Different Initial Growth Pressures
• A Comparative Study on the Optical and Electrical Properties of Si-Doped Polar and Nonpolar GaN

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