Song Keun | Korea Advanced Nano Fab Center, Suwon 443-770, Korea
スポンサーリンク
概要
関連著者
-
Song Keun
Korea Advanced Nano Fab Center, Suwon 443-770, Korea
-
Kim Hogyoung
College of Humanities and Sciences, Hanbat National University, Daejeon 305-719, Korea
-
Kim Jong
Korea Advanced Institute Of Science And Technology (kaist)
-
Kim Chang
Korea Advanced Institute Of Scierice And Technology
-
Hwang Sung
Korea Univ. Seoul Kor
-
Kim Eun
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
-
YOON Dae
School of Advanced Materials Science & Engineering, Sungkyunkwan University
-
Kim Jin
Quantun-function Spinics Lab. And Dept. Of Physics Hanyang University
-
Yoon Dae
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
-
Kim Hogyoung
College of Humanities and Sciences, Hanbat National University, Daejeon 305-719, Republic of Korea
-
Hwang Sung-Min
Energy-nano Materials Research Center, Korea Electronics Technology Institute, Seongnam 463-816, Korea
-
Song Hooyoung
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
-
Seo Yong
Energy-nano Materials Research Center, Korea Electronics Technology Institute, Seongnam 463-816, Korea
-
Kim Eun
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
-
Song Keun
Korea Advanced Nano Fabrication Center, Suwon 443-270, Korea
-
Song Keun
Korea Advanced Nano Fab Center, Suwon, Gyeonggi 443-770, Korea
-
Song Keun
Korea Advanced Nano Fab Center, Suwon, Gyeoggi 443-770, Republic of Korea
-
Hwang Sung
Korea Electronics Technology Institute, Seongnam 463-816, Korea
-
Kim Chang
Korea Advanced Nano Fab Center, Suwon, Gyeonggi 443-770, Korea
著作論文
- Carrier Dynamics of Deep-Level States in InGaN/GaN Multiquantum Wells
- Properties of Si-Doped $a$-Plane GaN Grown with Different SiH4 Flow Rates
- Mg Doping Effect in Nonpolar a-Plane GaN
- Optical Properties of Undoped a-Plane GaN Grown with Different Initial Growth Pressures
- A Comparative Study on the Optical and Electrical Properties of Si-Doped Polar and Nonpolar GaN