A Comparative Study on the Optical and Electrical Properties of Si-Doped Polar and Nonpolar GaN

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概要

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• Si-doped polar (c-plane) and nonpolar (a-plane) GaN layers grown by metal--organic vapor phase epitaxy (MOVPE) were comparatively investigated using photoluminescence (PL) and Hall-effect measurements. While c-plane GaN revealed both band-acceptor and donor--acceptor transitions, the PL spectra for a-plane GaN were related to extended defects such as basal stacking faults (BSFs) and prismatic stacking faults (PSFs). A new emission peak was observed at 3.361 eV in the Si-doped a-plane GaN, which was attributed to Si-doping-induced defects. The temperature-dependent Hall-effect measurements showed that for c-plane GaN, mobility was dominated by optical phonon and ionized impurity scattering at high and low temperature, respectively. Conversely, for a-plane GaN, the scattering mechanism due to dislocations was dominant at all temperatures.

• 2012-05-25

著者

• Song Keun

  Korea Advanced Nano Fab Center, Suwon 443-770, Korea

• Kim Hogyoung

  College of Humanities and Sciences, Hanbat National University, Daejeon 305-719, Korea

• Kim Hogyoung

  College of Humanities and Sciences, Hanbat National University, Daejeon 305-719, Republic of Korea

• Song Keun

  Korea Advanced Nano Fab Center, Suwon, Gyeoggi 443-770, Republic of Korea

関連論文

• Carrier Dynamics of Deep-Level States in InGaN/GaN Multiquantum Wells
• Properties of Si-Doped $a$-Plane GaN Grown with Different SiH4 Flow Rates
• Mg Doping Effect in Nonpolar a-Plane GaN
• Optical Properties of Undoped a-Plane GaN Grown with Different Initial Growth Pressures
• A Comparative Study on the Optical and Electrical Properties of Si-Doped Polar and Nonpolar GaN

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