Wide Band Gap and p-Type Conductive BaCuSeF Thin Films Fabricated by Pulsed Laser Deposition
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概要
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BaCuSeF films were fabricated on glass substrates for solar cell application. The crystallographic orientation of the films depended on the thickness of the films. The BaCuSeF films with thicknesses of 0.35, 0.6, and 1.0 μm had 102 preferential orientation, and a thicker film of 1.3 μm was polycrystalline. All of the films showed average transmittance of {>}50% in the visible light region, and the determined band gap energy was 2.8 eV. All of the films showed p-type conductivity of more than 1 S cm-1. The 0.35-μm BaCuSeF film showed the highest p-type conductivity of 19.2 S cm-1. The BaCuSeF is applicable to electrodes for chalcopyrite-based thin film tandem solar cells.
- 2012-10-25
著者
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Yamazoe Seiji
Department Of Materials Chemistry Ryukoku University
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Wada Takahiro
Department Of Intelligent Mechanical Systems Faculty Of Engineering Kagawa University
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Yoshikawa Munehiro
Department of Materials Chemistry, Ryukoku University, Otsu 520-2194, Japan
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