Quantification of Superiority of Broad-Buffer Diodes

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We have quantitatively shown the superiority of broad-buffer (BB) diodes over conventional p--i--n diodes, especially with regard to fast and soft reverse recovery, by measuring a new quantity, $\Gamma$, signifying the degree of reverse recovery oscillation (RRO). The performance of switching devices has been evaluated in terms of the forward voltage drop $V_{\text{F}}$ and the reverse recovery loss $E_{\text{RR}}$ up to now, but these quantities cannot assess the inhibition of the RRO, which is another important property of switching devices. The quantity $\Gamma$, defined as the difference between the voltage rating and the RRO threshold power-supply voltage, represents how well the RRO is inhibited. We evaluated the performance of diodes having a variety of doping profiles in the n-drift region by numerically calculating $V_{\text{F}}$, $E_{\text{RR}}$, and $\Gamma$ and plotting these quantities in a three-dimensional evaluation space. Our device simulation results clearly show that the values of $\Gamma$ as well as $V_{\text{F}}$ and $E_{\text{RR}}$ for BB diodes are significantly lower than those for conventional diodes, and that BB diodes should be classified as a new category of diodes in view of their superior reverse recovery characteristics.
2011-05-25