Sideband Quenching in a Driven Double-Barrier System —Scaling Behavior for Inhomogeneous Potentials—

概要

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Using a transfer matrix method, we have studied the relationship between the conductance of a harmonically driven quantum dot system and the strength $V_{\text{ac}}$ of the time-varying potential in both cases of $\hbar\omega \neq \Delta \epsilon$ and $\hbar\omega = \Delta \epsilon$, where $\omega$ is the frequency of the time-varying potential and $\Delta \epsilon$ is the energy distance between adjacent resonant levels of the system. In the off-resonance condition ($\hbar\omega \neq \Delta\epsilon$), it is found that conductance dips appear in the $V_{\text{ac}}$ dependence of the sideband conductance instead of the perfect sideband quenching predicted by previous works. Our results show that conductance dips corresponding to the quenching scale with $\omega^{-1}$, while previous theories have suggested that the spectral weight of sideband components is scaled by $\omega^{-2}$ for inhomogeneous time-varying potentials. Under the resonance condition ($\hbar\omega =\Delta\epsilon$), our calculation shows the Rabi-type level splitting. The quenching effect of the Rabi-type splitting is also discussed.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2001-03-30