P-i-n Diode with Broad-Buffer Zone Formed Directly Inside of Silicon Bulk Wafer by Using Hydrogen-Related Shallow Donor
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2008-05-25
著者
-
Nemoto Michio
Fuji Electric Device Technology Co. Ltd.
-
YOSHIMURA Takashi
Fuji Electric Device Technology Co., Ltd.
-
NAKAZAWA Haruo
Fuji Electric Device Technology Co., Ltd.
-
Nakazawa Haruo
Fuji Electric Device Technology Co. Ltd.
関連論文
- P-i-n Diode with Broad-Buffer Zone Formed Directly Inside of Silicon Bulk Wafer by Using Hydrogen-Related Shallow Donor
- Quantification of superiority of broad-buffer diodes
- Quantification of Superiority of Broad-Buffer Diodes