Single Crystal Growth and Fermi Surface Properties of an Antiferromagnet UPdGa_5(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
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概要
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We have succeeded in growing a high-quality single crystal of an antiferromagnet UPdGa_5 by the Gaflux method with the off-stoichiometric composition of U:Pd:Ga=1:2:7.3. The Neel temperature T_N=30.5K is found to increase with increasing the residual resistivity ratio (RRR) and becomes constant for a high-quality single crystal sample whose RRR is larger than 50. The electronic state has been investigated by the de Haas-van Alphen experiment, indicating the similar cylindrical Fermi surfaces as in an antiferromagnet UPtGa_5. We have also studied the pressure effect by measuring the electrical resistivity. The Neel temperature decreases with increasing pressure and becomes zero at 3.1GPa. The antiferromagnetic state is changed into the paramagnetic state above 3.1GPa.
- 一般社団法人日本物理学会の論文
- 2005-08-15
著者
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SETTAI Rikio
Graduate School of Science, Osaka University
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NAKASHIMA Miho
Graduate School of Science, Osaka University
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Hedo Masato
Institute For Solid State Physics (issp) The University Of Tokyo
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Yamamoto Etsuji
Advanced Science Research Center Japan Atomic Energy Agency
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Shishido Hiroaki
Graduate School Of Science Osaka University
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Yamagami Hiroshi
Department Of Neurology Stroke Center Kobe City Medical Center General Hospital
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Ueda Taiki
Graduate School Of Science Osaka University
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Kobayashi Tatsuo
Departmant Of Physics Kyoto University
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Kirita Shingo
Graduate School At Science Osaka University
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MATSUDA Tatsuma
Advance Science Research Center, Japan Atomic Energy Agency
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ONUKI Yoshichika
Advanced Science Research Center, Japan Atomic Energy Agency:Department of Physics, Graduate School of Science, Osaka University
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HAGA Yoshinori
Advance Science Research Center, Japan Atomic Energy Agency
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IKEDA Shugo
Advanced Science Research Center, Japan Atomic Energy Agency
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Uwatoko Yoshiya
Institute for Solid State Physics
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