High Field Magnetoresistance and de Haas--van Alphen Effect in LaRu2Al10

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We have measured the magnetoresistance and de Haas--van Alphen (dHvA) effect in LaRu2Al10, which is a reference compound of CeRu2Al10 that exhibits an unusual transition at T_{0}\simeq 27 K. The magnetoresistance increases with increasing magnetic field at low temperatures in the wide field directions, suggesting that LaRu2Al10 is a compensated metal without an open orbit. From the dHvA experiments, about three dHvA frequency branches whose cyclotron effective masses are close to 1m_{0} (m_{0}: rest mass of an electron) were detected. The observed dHvA branches for the main Fermi surface are well explained by the results of band structure calculation based on a full potential linearized augmented-plane-wave (FLAPW) method and local-density approximation (LDA), that demonstrates the multiply connected Fermi surface with no nesting property in LaRu2Al10.
2011-08-15