Optical Study of the Accumulated Charge in the Amorphous InGaZnO4 Thin-Film Transistor
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概要
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Thin-film transistors (TFTs) with amorphous InGaZnO4 as a channel layer are known to exhibit high field-effect mobility. We studied the characteristic of the accumulated carriers in this TFT by optical spectroscopy and observed Drude absorption and oscillation in the transmittance spectrum of the channel region appearing with an applied gate voltage. The scattering rate of the carriers in the accumulation layers estimated from the optical spectrum is $\hbar/\tau_{\text{AL}}=0.19$ eV, and this small value is the origin of the high mobility of the TFT with amorphous InGaZnO4.
- 2009-09-15
著者
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Uesu Yoshiaki
Depart. Phys. Waseda Univ.
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KATSUFUJI Takuro
Department of Advanced Materials Science, University of Tokyo
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Kato Akira
Department Of Anesthesiology Kansai Medical University
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Kato Akira
Department of Physics, Waseda University, Shinjuku, Tokyo 169-8555
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Uesu Yoshiaki
Department of Physics, Waseda University, Shinjuku, Tokyo 169-8555
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Katsufuji Takuro
Department of Physics, Waseda University, Shinjuku, Tokyo 169-8555
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