Domain Inversion by an Electron-Beam-Induced Electric Field in MgO:LiNbO_3, LiNbO_3 and LiTaO_3
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概要
- 論文の詳細を見る
This report is, as far as we know, the first to demonstrate ferroelectric domain inversion in a photorefractive-damage-resistant MgO:LiNbO_3 (MgO:LN) crystal upon electron beam irradiation. The domain inversion was found to be achieved by applying an electron-beam-induced electric field (EBIEF). By comparing the requirements of electron beam irradiation for domain inversion in MgO:LN, LiNbO_3 and LiTaO_3, a domain in MgO:LN was found to exhibit the highest critical values of current i_c and time t_c among these crystals. The relationship between i_c and t_c was explained in terms of a simple charge leakage model.
- 社団法人応用物理学会の論文
- 1996-01-01
著者
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UESU Yoshiaki
Department of Physics, Waseda University
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Uesu Yoshiaki
Department Of Physics Waseda University
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Uesu Yoshiaki
Depart. Phys. Waseda Univ.
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KURIMURA Sunao
Department of Physics, Waseda University
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Kurimura Sunao
Department Of Physics Waseda University
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SHIMOYA Ichiro
Department of Physics, Waseda University
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Shimoya Ichiro
Department Of Physics Waseda University
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