Pulsed Laser Deposition and Ionic Liquid Gate Control of Epitaxial Bi₂Se₃ Thin Films

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概要

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• High-quality epitaxial thin films of the topological insulator Bi₂Se₃ with atomically flat surfaces have been grown on InP(111)A substrates by means of pulsed laser deposition, which can target a variety of materials for the further chemical tuning of topological insulators. Utilizing an ionic liquid gate structure fabricated on the top of a thin (${\sim}6$ nm thick) film, we have controlled the sheet carrier density $n_{\text{sheet}}$ (up to $\Delta n_{\text{sheet}}\sim 1.3\times 10^{14}$ cm-2). The sharp negative magnetoconductance due to the two-dimensional weak antilocalization has been observed and the phase coherence length is modulated with the gate voltage.

• 2011-08-25

著者

• Kawasaki Masashi

  Department Of Applied Biological Science Tokyo Noko University

• Tokura Yoshinori

  Department Of Applied Physics And Quantum Phase Electronics Center University Of Tokyo

• Yoshimi Ryutaro

  Department Of Applied Physics And Quantum Phase Electronics Center University Of Tokyo

• Hidaka Takeaki

  Department Of Applied Physics And Quantum Phase Electronics Center University Of Tokyo

• Yuan Hongtao

  Department Of Applied Physics And Quantum Phase Electronics Center University Of Tokyo

• Iwasa Yoshihiro

  Department Of Applied Physics And Quantum Phase Electronics Center University Of Tokyo

• Onose Yoshinori

  Department Of Applied Physics And Quantum Phase Electronics Center University Of Tokyo

• TSUKAZAKI Atsushi

  Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo

• Iwasa Yoshihiro

  Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Onose Yoshinori

  Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Hidaka Takeaki

  Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Tsukazaki Atsushi

  Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Kawasaki Masashi

  Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

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