Leakage Current Reduction Mechanism of Oxide--Nitride--Oxide Inter-Poly Dielectrics through the Post Plasma Oxidation Treatment
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概要
- 論文の詳細を見る
High quality oxide--nitride--oxide (ONO) inter-poly dielectrics were successfully fabricated by the optimized plasma oxidation without H2. The bottom low pressure chemical vapor deposition (LPCVD) oxides treated by the conventional N2O annealing step were subjected to the post deposition process using a plasma treatment. This process reduces both the leakage current and the stress-induced leakage current (SILC), while no thickness increase of the bottom LPCVD oxides was observed due to the plasma treatment. Based on the photo electron injection technique, it is found that the O2 plasma oxidation method significantly reduces the defect centers located at 1.67 nm away from the bottom oxide/floating gate interface.
- 2011-04-25
著者
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Roh Yonghan
Department Of Electronic Engineering Sung Kyun Kwan University
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Kang Chang-Jin
Samsung Electronics Co., Ltd., Yongin, Kyounggi-do 446-711, Korea
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Lee Eun-Young
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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Yoo Dae-Han
Samsung Electronics Co., Ltd., Yongin, Kyounggi-do 446-711, Korea
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Yoo Dae-Han
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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Kang Chang-Jin
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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Moon Joo-Tae
Samsung Electronics Co., Ltd., Yongin, Kyounggi-do 446-711, Korea
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Moon Joo-Tae
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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Lee Woong
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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Jee Jeonggeun
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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Bok Jinkwon
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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Hyung Younwoo
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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Kim Seoksik
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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Hyung Younwoo
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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Jee Jeonggeun
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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Roh Yonghan
Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, Gyeonggido 440-746, Republic of Korea
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Bok Jinkwon
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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Kim Seoksik
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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Lee Woong
Samsung Electronics, Semiconductor R&D Center, Youngin, Gyeonggido 449-711, Republic of Korea
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