Origin of Crossover in Current Density--Voltage Characteristics of Cu(In,Ga)Se2 Thin Film Solar Cell Fabricated Using Lift-Off Process
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概要
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Crossover is observed in the current density--voltage characteristics of the Cu(In,Ga)Se2 (CIGS) solar cell with the inverted graded band gap structure fabricated using the lift-off process. We found that the crossover was attributed to the fact that photocurrent flew toward the same direction as the forward bias owing to the increases in bias. We propose that the quasi-electric field in which the inverted graded band gap structure of the CIGS layer formed plays an important roll in this crossover behavior.
- 2011-04-25
著者
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TAKAKURA Hideyuki
College of Science and Engineering, Ritsumeikan University
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Minemoto Takashi
Ritsumeikan Global Innovation Research Organization (R-GIRO), Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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Abe Yasuhiro
Ritsumeikan University, Ritsumeikan Global Innovation Research Organization, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan
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