Lift-Off Process for Flexible Cu(In,Ga)Se2 Solar Cells

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概要

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• A lift-off process for flexible Cu(In,Ga)Se2 (CIGS) solar cells was developed. After the growth of a CIGS thin film on a Mo/glass substrate at 550 °C, the CIGS film was transferred to polyimide and poly(tetrafluoroethylene) films. Process temperatures for the device fabrication after the transfer were less than 100 °C. The conversion efficiencies of the lift-off CIGS solar cells were similar and were almost one-half that of a CIGS solar cell prepared by a standard process. The difference was mainly due to the low fill factor caused by a poor back-contact property and the low short-circuit current caused by an inappropriate band gap profile in the CIGS layer. There still remain problems related to the improvement in efficiency; however, this is the first report on flexible CIGS solar cells on a low-thermal-tolerance substrate. We demonstrated the possibility of freedom of substrate material choice in CIGS solar cells.

• 2010-04-25

著者

• Takashi Minemoto

  Ritsumeikan University, Ritsumeikan Global Innovation Research Organization, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan

• Minemoto Takashi

  Ritsumeikan Global Innovation Research Organization (R-GIRO), Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

• Shintaro Osada

  Ritsumeikan University, College of Science and Engineering, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan

• Abe Yasuhiro

  Ritsumeikan University, Ritsumeikan Global Innovation Research Organization, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan

• Anegawa Takaya

  Ritsumeikan University, College of Science and Engineering, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan

• Hideyuki Takakura

  Ritsumeikan University, College of Science and Engineering, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan

関連論文

• Nanoimprint Lithography Using Novolak Photoresist and Soft Mold at Room Temperature
• Lateral Graphoepitaxy of Germanium Controlled by Microholes on SiO_2 Surface
• Surface Morphology and Device Performance of CuInS2 Solar Cells Prepared by Single- and Two-Step Evaporation Methods
• Application of Sputtered ZnO1-xSx Buffer Layers for Cu(In,Ga)Se2 Solar Cells
• Origin of Crossover in Current Density--Voltage Characteristics of Cu(In,Ga)Se2 Thin Film Solar Cell Fabricated Using Lift-Off Process
• Grain Boundary Character Distribution on the Surface of Cu(In,Ga)Se2 Thin Film
• Layer Transfer of Cu(In,Ga)Se2 Thin Film and Solar Cell Fabrication
• Lift-Off Process for Flexible Cu(In,Ga)Se2 Solar Cells

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