Nanoimprint Lithography Using Novolak-Type Photoresist and Soft Mold at Room Temperature
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概要
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Nanoimprint lithography using novolak-type photoresist and a soft mold was successfully demonstrated. Two-dimensional square gratings with the pitch of 1000 nm and height of 300 nm formed on a polyester sheet were transferred onto novolak-type photoresist by combining pressing and successive developing of the novolak-type photoresist. By using the patterned novolak-type photoresist as an etching mask, a thermally oxidized 320-nm-thick SiO2 layer on a Si substrate was etched by reactive ion etching with CHF3 gas. Through this fabrication process, holes with the radius of 450 nm and depth of 320 nm were obtained on the thermally oxidized 320-nm-thick SiO2 layer.
- 2004-06-15
著者
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MINEMOTO Takashi
College of Science and Engineering, Ritsumeikan University
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TAKAKURA Hideyuki
College of Science and Engineering, Ritsumeikan University
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HAMAKAWA Yoshihiro
College of Science and Engineering, Ritsumeikan University
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Koide Takeshi
College Of Science And Engineering Ritsumeikan University
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Numai Takahiro
College Of Science And Engineering Ritsumeikan University
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Minemoto Takashi
College of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
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Takakura Hideyuki
College of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
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Numai Takahiro
College of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
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