Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux
スポンサーリンク
概要
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A radio frequency inductively coupled plasma (rf-ICP) nitrogen discharge was investigated to improve group III nitride growth on Si substrates. Two modes of the rf-ICP discharge, low brightness (LB) and high brightness (HB) discharges, were successfully controlled through mode transition. Direct irradiation and indirect irradiation of nitrogen atoms were applied for the growth of group III nitrides. As an application of indirect irradiation of nitrogen atoms, the growth of $\beta$-Si3N4 using interface reaction epitaxy (IRE) was studied. As applications of direct irradiation of nitrogen atoms, activity modulation migration-enhanced epitaxy (AM-MEE) and plasma-assisted molecular beam epitaxy (PA-MBE), which are atomic layer epitaxy (ALE) methods, are demonstrated. These growth systems operate to realize a single-growth process from a Si substrate to an AlN or GaN epitaxial layer, i.e., through preparation of a double buffer (DBL) layer of AlN/$\beta$-Si3N4/Si after the growth of IRE $\beta$-Si3N4 and IRE AlN. The electron emission due to the self-ionization of nitrogen atoms on a negatively biased electrode is demonstrated to measure in situ direct and indirect nitrogen atom fluxes during the growth.
- 2011-01-25
著者
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Wada Motoi
Department Of Elctronics Doshisha University
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ARIYADA Osamu
ARIOS INC.
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OHACHI Tadashi
Department of Electronics, Doshisha University
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Yamabe Nobuhiko
Department of Electrical Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321, Japan
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Ohachi Tadashi
Department of Electrical Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321, Japan
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Wada Motoi
Department of Electrical Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321, Japan
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