OHACHI Tadashi | Department of Electronics, Doshisha University
スポンサーリンク
概要
関連著者
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Wada Motoi
Department Of Elctronics Doshisha University
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OHACHI Tadashi
Department of Electronics, Doshisha University
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Ohachi Tadashi
Department of Electrical Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321, Japan
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Wada Motoi
Department Of Electronics Doshisha University
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Kasuya Toshiro
Department Of Electronics Doshisha University
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Flauta Randolph
Department Of Materials Engineering College Of Engineering University Of The Philippines
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Tadashi Ohati
同志社大学工学部
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Wada Motoi
Department of Electronics, Doshisha University
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ARIYADA Osamu
ARIOS INC.
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Yamabe Nobuhiko
Department of Electrical Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321, Japan
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Wada Motoi
Department of Electrical Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321, Japan
著作論文
- Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux
- Formation of bulk gallium nitride(GaN) using a multi-cusp plasma-sputter ion source system (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状)
- Formation of bulk gallium nitride (GaN) using a multi-cusp plasma-sputter ion source system (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状)