Formation of bulk gallium nitride (GaN) using a multi-cusp plasma-sputter ion source system (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状)
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概要
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A multi-cusp plasma-sputter ion source system was used in the formation of bulk GaN crystals. By reaction of excited nitrogen species in a plasma with liquid Ga, polycrystalline and textured GaN crystals were formed. At a neutral nitrogen pressure of 0.3 Pa, the electron density and electron temperature of the plasma discharge ranged from 7.0 × 10^10 to 1.4 × 10^11/cm^3 and 1.5 to 2.0 eV, respectively. The formed GaN appeared rough on the top and bottom surfaces but showed some shiny and well faceted appearance in the inner part of the bulk crystal when cleaved. X-ray diffraction peaks confirmed the irradiated materials to be fine crystalline GaN with distinct primary reflection corresponding to (002) plane of GaN which indicated good texturing of the crystals formed.
- 社団法人電子情報通信学会の論文
- 2002-06-06
著者
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Wada Motoi
Department Of Electronics Doshisha University
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Wada Motoi
Department Of Elctronics Doshisha University
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Kasuya Toshiro
Department Of Electronics Doshisha University
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Flauta Randolph
Department Of Materials Engineering College Of Engineering University Of The Philippines
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Tadashi Ohati
同志社大学工学部
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OHACHI Tadashi
Department of Electronics, Doshisha University
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Ohachi Tadashi
Department of Electrical Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321, Japan
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Wada Motoi
Department of Electronics, Doshisha University
関連論文
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- Formation of Gallium Nitride(GaN)Crystals by Plasma Bombardment
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- Formation of bulk gallium nitride(GaN) using a multi-cusp plasma-sputter ion source system (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状)
- Formation of bulk gallium nitride (GaN) using a multi-cusp plasma-sputter ion source system (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状)
- Correlation between Negative Hydrogen Ion Production and Work Function of Plasma Grid Surface in a Cesium-Introduced Volume-Production-Type Negative Hydrogen Ion Source
- Density Measurement of Negative Hydrogen Ions by DC Laser Photodetachment Method
- Effect of Surface and Growth Conditions for Formation of Textured Polycrystalline GaN Crystals by Reactive N2 Plasma
- Surface Modification of Narra Wood (Pterocarpus indicus) by Ion Shower Treatment
- An Investigation as to the Cause of Beam Asymmetry in a Compact Gas Discharge Ion Source: A Focus on Beam-Wall Interaction
- Correlation between Negative Hydrogen Ion Production and Work Function of Plasma Grid Surface in a Cesium-Introduced Volume-Production-Type Negative Hydrogen Ion Source