Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal--Oxide--Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices

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概要

• 論文の詳細を見る

• We have developed a numerical simulation methodology to analyze the impact of both device architecture and transport properties on static circuit performance. Firstly, to simulate ballistic transport, we have enhanced the pioneering approach of quasi-ballistic mobility proposed by Rhew and Lundstrom and introduced it into a technology computer aided design (TCAD) simulator. Secondly, we have introduced the remote Coulomb scattering (RCS) limited mobility into the effective mobility and calibrated our model using experimental mobility data. We have used our approach to simulate two ultimate architectures: fully-depleted (FD) silicon-on-insulator (SOI) metal--oxide--semiconductor field-effect transistor (MOSFET) (with either thin or thick buried oxide) and nanowire MOSFET. Finally, we have analyzed the impact of both transport properties and electrostatic control on the noise margin (NM) of complementary metal--oxide--semiconductor (CMOS) inverter.

• 2011-01-25

著者

• Barraud Sylvain

  Cea-leti Minatec

• Autran Jean-Luc

  IM2NP, UMR CNRS 6242, 49 rue Joliot-Curie, BP 146, F-13384 Marseille Cedex 13, France

• Munteanu Daniela

  IM2NP-CNRS, UMR CNRS 6242, 13384 Marseille Cedex 13, France

• Munteanu Daniela

  IM2NP, CNRS (UMR 6242), Bât. IRPHE, 49 rue Joliot-Curie, BP 146, F-13384 Marseille Cedex 13, France

• Martinie Sebastien

  IM2NP-CNRS, UMR CNRS 6242, 13384 Marseille Cedex 13, France

• Le Carval

  CEA-LETI, MINATEC, 38054 Grenoble Cedex 9, France

• Dura Julien

  IM2NP-CNRS, UMR CNRS 6242, 13384 Marseille Cedex 13, France

• Jaud Marie-Anne

  CEA-LETI, MINATEC, 38054 Grenoble Cedex 9, France

• Barraud Sylvain

  CEA-LETI, MINATEC, 38054 Grenoble Cedex 9, France

• Autran Jean-Luc

  IM2NP-CNRS, UMR CNRS 6242, 13384 Marseille Cedex 13, France

• Autran Jean-Luc

  IM2NP, CNRS (UMR 6242), Bât. IRPHE, 49 rue Joliot-Curie, BP 146, F-13384 Marseille Cedex 13, France

関連論文

• Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal--Oxide--Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices
• Quantum Compact Model of Drain Current in Independent Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors
• 直径10nmナノワイヤCMOSにおけるキャリア輸送に関する研究(IEDM特集(先端CMOSデバイス・プロセス技術))
• Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors
• Simulation of Gate Tunneling Current in Metal–Insulator–Metal Capacitor with Multi layer High-$\kappa$ Dielectric Stack Using the Non-equilibrium Green’s Function Formalism

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