Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors
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概要
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A two-dimensional (2D) numerical simulation code of drain current including self-consistent solving of the Schrödinger and Poisson equations coupled with the drift-diffusion transport equation in double-gate (DG) metal–oxide–semiconductor field-effect transistor (MOSFET) devices has been developed. This code has been used to investigate the operation of independent DG (IDG) MOSFETs compared with classical DG MOSFETs in terms of short-channel effects (SCEs) and carrier quantum confinement. Simulations show that IDG MOSFET operation is different from that of DG MOSFETs due to the presence of a transverse electric field in the first structure that induces significant enhancement of quantum mechanical confinement. This leads to subthreshold performance degradation and to SCE enhancement in IDG MOSFETs compared with DG MOSFETs. We show that, in contrast to DG MOSFETs, quantum confinement effects must be taken into account in IDG MOSFET operation even for thick silicon films (${>}10--15$ nm).
- 2008-09-25
著者
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Moreau Mathieu
IM2NP, CNRS (UMR 6242), Bât. IRPHE, 49 rue Joliot-Curie, BP 146, F-13384 Marseille Cedex 13, France
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Moreau Mathieu
IM2NP, UMR CNRS 6242, 49 rue Joliot-Curie, BP 146, F-13384 Marseille Cedex 13, France
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Munteanu Daniela
IM2NP, UMR CNRS 6242, 49 rue Joliot-Curie, BP 146, F-13384 Marseille Cedex 13, France
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Autran Jean-Luc
IM2NP, UMR CNRS 6242, 49 rue Joliot-Curie, BP 146, F-13384 Marseille Cedex 13, France
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Munteanu Daniela
IM2NP, CNRS (UMR 6242), Bât. IRPHE, 49 rue Joliot-Curie, BP 146, F-13384 Marseille Cedex 13, France
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Autran Jean-Luc
IM2NP, CNRS (UMR 6242), Bât. IRPHE, 49 rue Joliot-Curie, BP 146, F-13384 Marseille Cedex 13, France
関連論文
- Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal--Oxide--Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices
- Quantum Compact Model of Drain Current in Independent Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors
- Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors
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