Mn Doping in Half-Heusler Semiconductors: Microstructural and Transport Properties
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概要
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The possibility of Mn doping in half-Heusler semiconductors (CoTiSb, FeVSb, NiTiSn, and NiZrSn) is reported. Mn-added polycrystalline ingots of these semiconductors were prepared by arc melting. Microstructural properties of these ingots indicate that the solubility limit of Mn in the half-Heusler phase is confined to a relatively limited range, that is, 0% for CoTiSb and FeVSb, 1% for NiTiSn, and 2% for NiZrSn. The electrical resistivity of polycrystalline NiZr0.98Mn0.02Sn indicates semiconducting temperature dependence with a transport gap of 84 meV.
- 2010-05-25
著者
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Maezawa Kunihiko
Department Of Applied Physics Tohoku University:toyama College Of Technology
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Fukuhara Tadashi
Department De Recherche Fundamentals Sur La Matiere Condense Spsms Cea-ceng
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Shinichi Masubuchi
Department of Physics, Tokyo Medical University, Sinjuku, Tokyo 160-8402, Japan
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Shinichi Masubuchi
Department of Physics, Tokyo Medical University, Shinjuku, Tokyo 160-8402, Japan
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Wang Fangfang
Department of Liberal Arts and Sciences, Toyama Prefectural University, Imizu, Toyama 939-0398, Japan
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