Prediction of Abnormal Etching Profile in High-Aspect-Ratio Via/Hole Etching Using On-Wafer Monitoring System
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概要
- 論文の詳細を見る
For the prediction of abnormal etching profiles, an ion trajectory prediction system has recently been developed. In this system, sheath modeling was combined with the on-wafer monitoring technique for accurate prediction. This system revealed that sidewall conductivity strongly affects the charge accumulation and ion trajectory in high-aspect-ratio holes. It was also found that the accumulated charge in adjacent holes is one of the reasons for the generation of twisting profiles according to analysis using the system. We presume that the prediction system is an effective tool for developing nanoscale fabrication.
- 2010-04-25
著者
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Seiji Samukawa
Institute of Fluid Science, Tohoku University, 2-1-1 Katahiara, Aoba-ku, Sendai 980-8577, Japan
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Tomohiko Tatsumi
Oki Semiconductor Miyagi Co., Ltd., 1 Okinotaira, Ohira, Miyagi 981-3693, Japan
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Ohtake Hiroto
Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Jinnai Butsurin
Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Fukuba Seiichi
Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Seiichi Fukuda
Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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