Hard-Mask-Through UV-Light-Induced Damage to Low-$k$ Film during Plasma Process for Dual Damascene

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概要

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• Plasma irradiation impact on a SiO2-hardmask/SiOCH low-$k$ film stacked structure was investigated in detail. The plasma irradiation induces damage to the low-$k$ film although it is covered by a hard mask. The hard-mask-through UV-light-induced damage showed plasma source gas dependence. The damage is determined by the UV light wavelength and photon energy. It was also found that a high substrate temperature accelerates the hard-mask-through UV-light-induced damage. The hard-mask-through UV-light-induced damage was hardly seen for the hard masks thicker than 115 nm in the O2-irradiation experiment. Conversely, an actual SiO2 film deposition process by plasma-enhanced chemical vapor deposition (PE-CVD) induces damage during deposition. The PE-CVD process induces heavier damage to the low-$k$ film than the O2-plasma experiment. Higher process temperature accelerates the hard-mask-through UV-light-induced damage in the hard mask SiO2 deposition process.

• 2010-04-25

著者

• Noriaki Matsunaga

  Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Seiji Samukawa

  Institute of Fluid Science, Tohoku University, 2-1-1 Katahiara, Aoba-ku, Sendai 980-8577, Japan

• Seiji Samukawa

  Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Matsunaga Noriaki

  Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Okumura Hirokatsu

  Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Jinnai Butsurin

  Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Butsurin Jinnai

  Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Hirokatsu Okumura

  Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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