An Accurate and Simplified Modeling of Energy and Momentum Relaxation Rates for Metal–Oxide–Semiconductor Device Simulation

スポンサーリンク

概要

• 論文の詳細を見る

• An accurate and simplified modeling for the energy and momentum relaxation rates has been proposed for simulating a velocity overshoot of electrons in metal–oxide–semiconductor field-effect transistors (MOSFETs). The relaxation rate has been featured by electron energy ($w$), gate field ($E_{\text{G}}$), and impurity-doping concentration ($N_{\text{I}}$). When the rate is defined by $ f_{\text{inv}}$ in the inversion layer and by $ f_{\text{bulk}}$ in bulk, the relaxation rate ($r$) in the whole area of MOSFETs can be modeled by an envelope function; $r=\max( f_{\text{inv}}, f_{\text{bulk}})$. Based on the Boltzmann equation, relation of the relaxation rate to $w$, $E_{\text{G}}$, and $N_{\text{I}}$ has been studied and a simple modeling for $r(w,E_{\text{G}},N_{\text{I}})$ has been developed. The rate can be expressed by a combination of one-dimensional data arrays. By using the simple modeling, the rate has been readily determined with the help of Monte Carlo simulation, and the validity of the rate modeling has been demonstrated by carrying out device simulation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-02-25

著者

• Yamaguchi Ken

  Advanced Research Laboratory Hitachi Ltd.

• Shogo Sakurai

  AdvanceSoft Corporation, Minato, Tokyo 107-0052, Japan

• Sakurai Shogo

  AdvanceSoft Corporation, Minato, Tokyo 107-0052, Japan

• Tomizawa Kazutaka

  Department of Computer Science, Meiji University, Kawasaki 214-8571, Japan

• Kazutaka Tomizawa

  Department of Computer Science, Meiji University, Kawasaki 214-8571, Japan

関連論文

• Three-Dimensional Capacitance Analysis in an SRAM Cell
• High-Accuracy Analysis of Interconnect Capacitance for Floating Metal Fills
• Analysis of Quantum Effects on Backscattering from Drain Region of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
• Study of Backscattering Phenomenon from Drain Region of Silicon Decanano Diode Using Nonequilibrium Green’s Function Approach
• Suppression of Effects of Backscattering from Drain Region on Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Characteristics
• Backscattered Electrons from a Drain Region in a Silicon Decanano Diode
• An Accurate and Simplified Modeling of Energy and Momentum Relaxation Rates for Metal–Oxide–Semiconductor Device Simulation
• Analysis of Backscattering Phenomenon from Drain Region in Silicon Decanano Diode

スポンサーリンク