Analysis of Backscattering Phenomenon from Drain Region in Silicon Decanano Diode

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概要

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• We have analyzed the backscattering phenomenon from a drain region of a silicon (Si) decanano diode to investigate the backscattering effect on the characteristics of such a Si decanano device. Ensemble Monte Carlo (EMC) simulation is employed for considering the scattering effect with backscattered electrons from the drain region. The results of the numerical experiment revealed the following noteworthy conclusions. The count and rate of scattering with the backscattered electrons are low, even near a drain edge in a channel of the Si decanano diode. The average velocity of injected electrons from a source region in the channel is little degraded by scattering with the backscattered electrons from the drain region. Furthermore, the average velocity of all electrons in the channel significantly decreases near the drain edge due to the presence of very slow backscattered electrons as an average. Since the presence of backscattered electrons strongly degrades the performance of decanano devices, we believe it is increasingly important to analyze the backscattering phenomenon from the drain region, with the progress of the miniaturization of the decanano device.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-09-15

著者

• Tsutsumi Toshiyuki

  Department Of Computer Science School Of Science And Technology Meiji University

• Tomizawa Kazutaka

  Department of Computer Science, Meiji University, Kawasaki 214-8571, Japan

• Tomizawa Kazutaka

  Department of Computer Science, School of Science and Technology Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan

• Tsutsumi Toshiyuki

  Department of Computer Science, School of Science and Technology Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan

関連論文

• Analysis of Quantum Effects on Backscattering from Drain Region of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
• Study of Backscattering Phenomenon from Drain Region of Silicon Decanano Diode Using Nonequilibrium Green’s Function Approach
• Suppression of Effects of Backscattering from Drain Region on Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Characteristics
• Backscattered Electrons from a Drain Region in a Silicon Decanano Diode
• An Accurate and Simplified Modeling of Energy and Momentum Relaxation Rates for Metal–Oxide–Semiconductor Device Simulation
• Analysis of Backscattering Phenomenon from Drain Region in Silicon Decanano Diode

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