Analysis of Quantum Effects on Backscattering from Drain Region of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

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概要

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• We have analyzed quantum effects on backscattering from the drain region of a silicon decanano double-gate metal–oxide–semiconductor field-effect transistor (DG-MOSFET) using a Monte Carlo simulation. A backscattered (BS) rate with a full quantum effect is larger than that in the classical case. To investigate the causes, we have separated the full quantum effect into a subband energy effect and a two-dimensional electron gas (2DEG) transport effect. It is confirmed that the main cause of the increase in BS rate caused by the full quantum effect is the 2DEG transport effect. The 2DEG transport effect causes an electron distribution concentration on the center of the channel thickness, an increase in scattering rate at the drain edge and in the channel, and a tendency of the BS electrons to diffuse toward the source in the channel. Furthermore, we confirmed that the subband energy effect contributes greatly to the increase in BS rate caused by the full quantum effect in a channel as thin as 2 nm. The subband energy effect causes a strong tendency of the BS electrons to diffuse toward the source in the very thin channel. The contribution to the increase in BS rate of the subband energy effect, in addition to that of the 2DEG transport effect, becomes large when the channel is very thin.

• 2009-06-25

著者

• Tsutsumi Toshiyuki

  Department Of Computer Science School Of Science And Technology Meiji University

• Tomizawa Kazutaka

  Department of Computer Science, Meiji University, Kawasaki 214-8571, Japan

• Tomizawa Kazutaka

  Department of Computer Science, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan

• Tsutsumi Toshiyuki

  Department of Computer Science, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan

関連論文

• Analysis of Quantum Effects on Backscattering from Drain Region of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
• Study of Backscattering Phenomenon from Drain Region of Silicon Decanano Diode Using Nonequilibrium Green’s Function Approach
• Suppression of Effects of Backscattering from Drain Region on Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Characteristics
• Backscattered Electrons from a Drain Region in a Silicon Decanano Diode
• An Accurate and Simplified Modeling of Energy and Momentum Relaxation Rates for Metal–Oxide–Semiconductor Device Simulation
• Analysis of Backscattering Phenomenon from Drain Region in Silicon Decanano Diode

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