Tomizawa Kazutaka | Department of Computer Science, Meiji University, Kawasaki 214-8571, Japan
スポンサーリンク
概要
関連著者
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Tomizawa Kazutaka
Department of Computer Science, Meiji University, Kawasaki 214-8571, Japan
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Tsutsumi Toshiyuki
Department Of Computer Science School Of Science And Technology Meiji University
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Yamaguchi Ken
Advanced Research Laboratory Hitachi Ltd.
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Shogo Sakurai
AdvanceSoft Corporation, Minato, Tokyo 107-0052, Japan
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Sakurai Shogo
AdvanceSoft Corporation, Minato, Tokyo 107-0052, Japan
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Tomizawa Kazutaka
Department of Computer Science, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Tomizawa Kazutaka
Department of Computer Science, School of Science and Technology Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Kazutaka Tomizawa
Department of Computer Science, Meiji University, Kawasaki 214-8571, Japan
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Kazutaka Tomizawa
Department of Computer Science, School of Science and Technology Meiji University, 1-1-1 Higashi-mita, Tama-ku, Kawasaki 214-8571, Japan
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Tsutsumi Toshiyuki
Department of Computer Science, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Tsutsumi Toshiyuki
Department of Computer Science, School of Science and Technology Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Toshiyuki Tsutsumi
Department of Computer Science, School of Science and Technology Meiji University, 1-1-1 Higashi-mita, Tama-ku, Kawasaki 214-8571, Japan
著作論文
- Analysis of Quantum Effects on Backscattering from Drain Region of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
- Study of Backscattering Phenomenon from Drain Region of Silicon Decanano Diode Using Nonequilibrium Green’s Function Approach
- Suppression of Effects of Backscattering from Drain Region on Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Characteristics
- Backscattered Electrons from a Drain Region in a Silicon Decanano Diode
- An Accurate and Simplified Modeling of Energy and Momentum Relaxation Rates for Metal–Oxide–Semiconductor Device Simulation
- Analysis of Backscattering Phenomenon from Drain Region in Silicon Decanano Diode