Band-Bending at the Graphene–SiC Interfaces: Effect of the Substrate
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概要
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In-situ synchrotron-based photoemission spectroscopy, low-temperature scanning tunneling microscopy and Raman spectroscopy are used to investigate the interface properties of graphene on both the (0001) and ($000\bar{1}$) 6H-SiC (Si- and C-terminated surfaces). We clearly observe the upward band-bending upon the formation of interfacial graphene, which depends on the surface polarity of the underlying SiC substrate, i.e., a weak upward band bending by 0.4 eV forms on the Si-terminated 6H-SiC(0001); while a much larger upward band bending by 1.3 eV appears on the C-terminated 6H-SiC($000\bar{1}$).
- 2010-01-25
著者
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CHEN Shi
Department of Molecular Cell Biology, Medical Research Institute, Tokyo Medical and Dental Universit
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Chen Wei
Department Of Chemical Engineering Nagoya University
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Gao Xing
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542
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Shen Ze
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
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Shen Ze
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
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Wee Andrew
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542
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Huang Han
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542
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Qi Dong
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542
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Ni Zhen
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
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Chen Shi
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542
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Chen Wei
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542
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Chen Wei
Department of Cell Biology, Third Military Medical University
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