Impact of Implantation and Annealing on Channel Strain of Transistors with Embedded Silicon--Germanium Source and Drain

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We investigate the effect of implantation and annealing on 45 nm node transistors with embedded silicon--germanium source and drain, using UV Raman spectroscopy. Direct measurements of the channel strain indicate that the strain relaxed after implantation is recovered partially after annealing. Recovery of channel strain depends on annealing conditions. Our results show that a low-temperature, long-duration anneal results in a greater channel strain compared to a high-temperature, short-duration anneal. When a high-temperature anneal is needed for fabricating transistors, a two-step anneal involving a low-temperature furnace anneal prior to a high-temperature rapid thermal anneal can be beneficial for recovering channel strain.
2011-04-25