Comparative Study on Gate Insulators of Polymers and SiO2 in Transport Properties of p- and n-Type Organic Field-Effect Transistors
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概要
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Field-effect mobilities and threshold voltages in organic field-effect transistors (OFETs) were studied to elucidate the difference of the OFETs performance between Si/SiO2 and flexible polymer substrates. The polymer OFETs were built on poly(ethylene naphthalate) (PEN) film as the substrate with polyimide (PI) as the gate-insulators. Pentacene and N,N$'$-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide (PTCDI-C13) were employed as p- and n-type semiconductors. The n-type OFET on polymer substrates exhibited higher electron mobility and smaller threshold voltages compared with those on Si/SiO2. On the contrary, the p-type OFET on the Si/SiO2 substrate showed better transport performance than that on the polymer substrate. The results are discussed taking the difference of surface potential between SiO2 and PI gate-insulator, which possibly modifies OFET characteristics.
- 2010-01-25
著者
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NAGAMATSU Shuichi
Department of Computer Science and Electronics, Kyushu Institute of Technology
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TAKASHIMA Wataru
Research Center for Advanced Eco-Fitting Technology, Kyushu Institute of Technology
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Oku Shinya
Graduate School Of Life Science And System Engineering Kyushu Institute Of Technology
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Kaneto Keiichi
Graduate School Of Life Science And System Engineering Kyushu Institute Of Technology
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Nagase Toshiya
Graduate School Of Life Science And System Engineering Kyushu Institute Of Technology
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Oku Shinya
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu 808-0196, Japan
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Takashima Wataru
Research Center for Advanced Eco-fitting Technology, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu 808-0196, Japan
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Nagamatsu Shuichi
Department of Computer Science and Electronics, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
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Nagase Toshiya
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu 808-0196, Japan
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