Study of Gate Induced Channel in Organic Field Effect Transistors Using Poly(3-hexylthiophene) Films
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概要
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Organic field effect transistors (OFET) based on regioregular poly(3-hexylthiophene), P3HT, have been studied to investigate the substance properties of field-induced channel. The OFETs with bottom electrodes are fabricated by spin coating of P3HT solution on Si/SiO2 substrate. The on/off ratio, carrier mobility, threshold voltage and transconductance of the OFETs coated with and without LiF are measured as the function of P3HT film thickness ranging from 20–200 nm. The results indicate that the on/off ratio increased for thin films, though apparent mobility, threshold voltage and the transconductance decreased. The results are discussed in terms of the uniform distribution of charge carriers in the semiconductor region specified for OFETs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-01-15
著者
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Kaneto Keiichi
Graduate School Of Life Science And System Engineering Kyushu Institute Of Technology
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YANO Makoto
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology
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Singh Vipul
Graduate School Of Life Science And Systems Engineering Kyushu Institute Of Technology
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Singh Vipul
Graduate School of LSSE, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu 808-0196, Japan
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Yano Makoto
Graduate School of LSSE, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu 808-0196, Japan
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Takashima Wataru
Graduate School of LSSE, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu 808-0196, Japan
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Takashima Wataru
Graduate School of Life Science and System Engineering, Kyushu Institute of Technology, Kitakyushu 808-0196, Japan
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