Investigation of Depletion Layer at Interface of Poly(3-hexylthiophene) and Aluminum
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概要
- 論文の詳細を見る
At the interface of poly(alkylthiophene), PAT film with Al, an insulating depletion layer is formed and plays the role of rectification and photocarrier generation. A method to estimate the thickness of the depletion layer is proposed. The resistance of the PAT film increases upon deposition of a very thin Al layer on the film surface and is attributed to the formation of an insulating depletion layer. The thickness of the depletion layer is estimated to be around 25–80 nm, depending on the conductivity of the PAT film.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-09-15
著者
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TANIMURA D.
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology
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Takashima Wataru
Graduate School Of Life Science And Systems Engineering Kyushu Institute Of Technology
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Kaneto Keiichi
Graduate School Of Life Science And System Engineering Kyushu Institute Of Technology
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Rikitake Koichi
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Rikitake Koichi
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka 820-8502, Japan
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Takashima Wataru
Graduate School of Life Science and System Engineering, Kyushu Institute of Technology, Kitakyushu 808-0196, Japan
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