Role of Morphology on Photoluminescence Quenching and Depletion Width Formed at the Interface of Aluminum and Poly(3-alkylthiophene)
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概要
- 論文の詳細を見る
The interface formed at aluminum (Al) and poly(3-alkylthiophene) (P3AT) has been studied using bias dependent photoluminescence (PL) quenching in indium tin oxide (ITO)/P3AT/Al sandwiched cells. Different types of bias dependent PL quenching patterns were obtained by varying the alkyl chain length and the regioregularity of the P3AT. Observed results indicate that the PL quenching and depletion layer are strongly correlated to the morphology in these P3AT films. Further, it has also indicated about the spatial charge carrier distribution in these films. Moreover by changing the alkyl chain length a complete trend reversal was obtained between the PL quenching and the Mott–Schottky plot of these cells. These results have been explained on the basis of Field induced PL quenching in these films.
- 2009-06-25
著者
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TAKASHIMA Wataru
Research Center for Advanced Eco-Fitting Technology, Kyushu Institute of Technology
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Pandey Shyam
Department of Biological Functions and Engineering, Graduate School of Life Sciences and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
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Singh Vipul
Department of Biological Functions and Engineering, Graduate School of Life Sciences and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
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Takashima Wataru
Research Center for Advanced Eco-fitting Technology, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
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Kaneto Keiichi
Department of Biological Functions and Engineering, Graduate School of Life Sciences and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
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