Effect of N2O Flow Rate on Reliability of SiOx Films Deposited by SiH4–N2O Gas Mixture Plasma
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概要
- 論文の詳細を見る
SiOx films have several advantages as an interlayer dielectric in electronic devices owing to the strong adhesion between SiOx and the substrate. In this study, the coating performance as a function of the N2O flow rate was evaluated by electrochemical impedance spectroscopy and potentiodynamic polarization tests in an undisturbed environment. In addition, the coatings were examined by atomic force microscopy and Fourier transform infrared reflection spectroscopy. The SiOx films on a stainless-steel substrate showed the highest coating performance at a N2O flow rate of 120 sccm. This was attributed to the films having the lowest porosity value among those examined as a result of the fragmentation of SiO and SiO2 bonds and the improved surface roughness.
- 2009-08-25
著者
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Nam Nguyen
Department of Advanced Materials Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon 440-746, Korea
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LEE Nae
Department of Advanced Materials Engineering, Sejong University
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Kim Jung-Gu
Department of Advanced Materials Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon 440-746, Korea
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Kim Duck
Department of Advanced Materials Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon 440-746, Korea
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