Growth of Vertically Aligned Carbon Nanotubes inside Dome-structured Amorphous Silicon Holes by Plasma-enhanced Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Vertically aligned carbon nanotubes (CNTs) were synthesized inside an array of dome-structured amorphous silicon (a-Si) holes on glass substrates. An a-Si layer swelled up as amorphous carbon (a-C) was grown to penetrate beneath the a-Si layer through patterned holes during thermal chemical vapor deposition (CVD), leading to an array of a-Si domes filled with a-C. Following the etching of a-C inside the domes, vertically aligned CNTs were selectively grown inside an array of hollow dome-structured holes using alternating-current plasma-enhanced chemical vapor deposition. The potential of applying this structure to gated field emitter arrays was discussed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-03-15
著者
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Jin Yong
Fed Team Samsung Advanced Institute Of Technology
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Kim Jong
Fed Team Samsung Advanced Institute Of Technology
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Kim Ha
Fed Team Samsung Advanced Institute Of Technology
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Han In
Fed Team Samsung Advanced Institute Of Technology
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Jung Jae
Fed Team Samsung Advanced Institute Of Technology
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Kim Jung
Fed Team Samsung Advanced Institute Of Technology
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Park Young
Fed Team Samsung Advanced Institute Of Technology
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Park Chong
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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LEE Nae
Department of Advanced Materials Engineering, Sejong University
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Lee Nae
Department of Nano Science and Technology, Sejong University, Seoul 143-747, Korea
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Jung Jae
FED Team, Samsung Advanced Institute of Technology, Suwon 440-600, Korea
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Kim Ha
FED Team, Samsung Advanced Institute of Technology, Suwon 440-600, Korea
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Jin Yong
FED Team, Samsung Advanced Institute of Technology, Suwon 440-600, Korea
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Park Chong
Department of Nano Science and Technology, Sungkyunkwan University, Suwon 440-746, Korea
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Park Young
FED Team, Samsung Advanced Institute of Technology, Suwon 440-600, Korea
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