AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

概要

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AlGaN/GaN/AlGaN double heterostructure field-effect transistors (DHFET) with high breakdown voltage and low on-resistance were fabricated on silicon substrates. A linear dependency of the breakdown voltage on the buffer thickness and on the buffer Aluminium concentration was found. A breakdown voltage as high as 830 V and an on-resistance as low as 6.2 $\Omega\cdot$mm were obtained in devices processed on 3.7 μm buffer thickness. The gate–drain spacing was 8 μm and the devices did not have any field plates.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-04-25