Highly Efficient Room Temperature Spin Injection in a Metal-Insulator-Semiconductor Light-Emitting Diode

概要

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We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOX tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOX tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80 K and 12% at room temperature.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2003-05-15