Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 μm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C

概要

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AlGaN/GaN high electron mobility transistors (HEMTs) were electrically stressed in pinch-off condition at a drain voltage up to 200 V for 200 h at an ambient temperature of 200 °C. The tested transistors which were grown and processed on 4-in. silicon substrate showed negligible degradation. This proves that a combination of a high quality AlGaN/GaN/AlGaN double heterostructure, the in-situ Si3N4 deposition technique and an accurately optimized gate technology result in excellent device stability under harsh conditions.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2010-04-25